Datasheet > STU313D

STU313D

更新时间： 2024-11-23 06:14:31

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	246K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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STU313D 数据手册

STU313D

Ver 1.0

S mHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

RDS(ON) (mΩ) Max

VDSS

±4 @ VGS=10V

35 @ VGS=4.5V

33 @ VGS=-10V

5± @ VGS=-4.5V

16A

30V

-15A

-30V

D1/D2

S 1

S 2

P-ch

S 2

S 1

N-ch

TO-252-4L

ABSOLUTE MAXIMUM RATINGS T_C=±5 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

N-Channel P-Channel

Drain-Source Voltage

Gate-Source Voltage

±±0

-30

±±0

-15

V_GS

T_C=±5 C

Drain Current-Continuous ^a

I_D

T_C=70 C

1±.5

-11.5

-43

I_DM

I_AS

-Pulsed

Sigle Pulse Avalanche Current

Sigle Pulse Avalanche Energy ^d

7.5

5.0

L=0.5mH

E_AS

6.3

T_C=±5 C

Maximum Power Dissipation ^a

P_D

T_C=70 C

6.5

Operating Junction and Storage

Temperature Range

°C

T_J, T_STG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case ^a

1±

°C/W

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice.

Jul,30,±008

www.samhop.com.tw

12 3 4 5 6 7...11

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