Datasheet > STU428S

STU428S

更新时间： 2024-11-23 08:58:43

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
9页	195K
描述
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

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数据手册

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STU428S 数据手册

S TU/D428S

S amHop Microelectronics Corp.

Mar.8,2007

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FE ATUR E S

PR ODUCT S UMMAR Y

S uper high dense cell design for low R DS (ON).

Typ

R DS (ON) ( m Ωı )

VDS S

R ugged and reliable.

S urface Mount Package.

E S D Protected.

VGS = 10V

40V

50A

10 @ VGS = 4.5V

S TU S E R IE S

TO-252AA(D-PAK)

S TD S E R IE S

TO-251(l-PAK)

ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltag

Symbol

VDS

Limit

Unit

VGS

IDM

Drain Current-Continuous @TC=25 C

-Pulsed

100

Drain-Source Diode Forward Current

@Tc=25 C

Maximum Power Dissipation

Operating and Storage

Temperature Range

-55 to 175

TJ, TSTG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

C/W

J C

J A

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7...9

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