Datasheet > STU4N80K5

STU4N80K5

更新时间： 2024-11-20 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
23页	1294K
描述
N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，IPAK封装

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中文翻译

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数据手册

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STU4N80K5 数据手册

STD4N80K5, STF4N80K5,

STP4N80K5, STU4N80K5

N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs

in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet

production data

Features

TAB

Order code

V_DSR_DS(on)max.

I_D

P_TOT

STD4N80K5

STF4N80K5

STP4N80K5

STU4N80K5

60 W

20 W

DPAK

800 V

2.5 Ω

3 A

TO-220FP

TAB

60 W

TAB

• Industry’s lowest R_DS(on)x area

• Industry’s best figure of merit (FoM)

• Ultra low gate charge

IPAK

TO-220

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

'ꢀꢁꢂꢃ7$%ꢄ

Applications

• Switching applications

Description

*ꢀꢅꢄ

These very high voltage N-channel Power

MOSFETs are designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

6ꢀꢆꢄ

AM01476v1

Table 1. Device summary

Order code

Marking

Packages

Packaging

STD4N80K5

STF4N80K5

STP4N80K5

STU4N80K5

DPAK

TO-220FP

TO-220

IPAK

Tape and reel

4N80K5

Tube

February 2015

DocID025105 Rev 3

1/23

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...23

中文翻译

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