Datasheet > STU432S

STU432S

更新时间： 2024-11-26 08:58:43

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	897K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STU432S 数据手册

STU/D432S

SamHop Microelectronics Corp.

Nov,19,2007 ver1.4

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

40V

RDS(ON) ( m

Ω

) Max

50A

9 @ VGS = 10V

TO-252 and TO-251 Package.

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)

Symbol

Parameter

Drain-Source Voltage

Limit

Unit

VDS

Gate-Source Voltage

Drain Current-Continuous^a@Ta

25 C

100

-Pulsed

Drain-Source Diode Forward Current

Avalanche Current ^c

Avalanche Energy ^c

130

Maximum Power Dissipation ^a

Ta= 25 C

Operating Junction and Storage

Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

J C

C/W

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7...9

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