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STU4530NLS PDF预览

STU4530NLS

更新时间: 2024-11-02 04:01:43
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 943K
描述
N-Channel Logic Level E nhancement Mode Field Effect Transistor

STU4530NLS 数据手册

 浏览型号STU4530NLS的Datasheet PDF文件第2页浏览型号STU4530NLS的Datasheet PDF文件第3页浏览型号STU4530NLS的Datasheet PDF文件第4页浏览型号STU4530NLS的Datasheet PDF文件第5页浏览型号STU4530NLS的Datasheet PDF文件第6页浏览型号STU4530NLS的Datasheet PDF文件第7页 
S TU/D4530NLS  
S amHop Microelectronics C orp.  
Dec 28,2005  
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
)
Typ  
8
@ VG S = 10V  
35V  
53A  
TO-252 and TO-251 P ackage.  
10 @ VG S = 4.5V  
D
D
G
S
G
S TU S E R IE S  
TO-252AA(D-P AK)  
S TD S E R IE S  
TO-251(l-P AK)  
S
ABS OLUTE MAXIMUM R ATING S (Ta=25 C unless otherwise noted)  
Limit  
40  
Unit  
P arameter  
S ymbol  
Vspike (c)  
Drain-S ource Voltage R ating  
V
V
V
35  
V
V
DS  
G S  
Drain-S ource Voltage  
G ate-S ource Voltage  
20  
I
D
53  
100  
20  
A
A
Drain C urrent-C ontinuous @ T  
C
=25 C  
a
-P ulsed  
I
DM  
Drain-S ource Diode Forward C urrent  
@ Tc=25 C  
I
S
A
W
P
D
50  
Maximum P ower Dissipation  
Operating and S torage  
Temperature R ange  
C
-55 to 175  
TJ , TS TG  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-C ase  
C/W  
C/W  
R
R
J C  
J A  
3
50  
Thermal R esistance, J unction-to-Ambient  
1

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