Datasheet > STU5N65M6

STU5N65M6

更新时间： 2024-11-20 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	684K
描述
N沟道650 V、1.15 Ohm典型值、4 A MDmesh M6功率MOSFET，IPAK封装

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STU5N65M6 数据手册

STU5N65M6

N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6

Power MOSFET in an IPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STU5N65M6

650 V

1.3 Ω

4 A



Reduced switching losses

Lower R_DS(on)x area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

IPAK

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

The new MDmesh™ M6 technology incorporates

the most recent advancements to the well-known

and consolidated MDmesh family of SJ

MOSFETs. STMicroelectronics builds on the

previous generation of MDmesh devices through

its new M6 technology, which combines excellent

R_DS(on)* area improvement with one of the most

effective switching behaviors available, as well as

a user-friendly experience for maximum end-

application efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STU5N65M6

5N65M6

IPAK

Tube

May 2016

DocID029218 Rev 2

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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