Datasheet > STU5N70M6-S

STU5N70M6-S

更新时间： 2024-11-03 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	251K
描述
N沟道700 V、1.2 Ohm典型值、3.5 A MDmesh M6功率MOSFET，短IPAK封装

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STU5N70M6-S 数据手册

STU5N70M6-S

Datasheet

N-channel 700 V, 1.2 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET

in a short IPAK package

Features

DS(on)

max.

Order code

TAB

STU5N70M6-S

700 V

1.4 Ω

3.5 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

Short IPAK

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

S(3)

AM01475V1

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent R_DS(on)per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Product status link

STU5N70M6-S

Product summary

Order code

Marking

STU5N70M6-S

5N70M6

Package

Packing

Short IPAK

Tube

DS12557 - Rev 1 - May 2018

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...12

中文翻译

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