Datasheet > STU5N60M2

STU5N60M2

更新时间： 2024-11-20 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	540K
描述
N沟道600 V、1.3 Ohm典型值、3.5 A MDmesh M2功率MOSFET，IPAK封装

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数据手册

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STU5N60M2 数据手册

STD5N60M2, STP5N60M2, STU5N60M2

Datasheet

N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh™ M2

Power MOSFETs in DPAK, TO-220 and IPAK packages

Features

TAB

@ T

DS(on)

max.

Order code

STD5N60M2

Jmax

DPAK

TO-220

TAB

STP5N60M2

650 V

1.4 Ω

3.5 A

STU5N60M2

IPAK

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

D(2, TAB)

Zener-protected

Applications

G(1)

•

Switching applications

Description

S(3)

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

NG1D2TS3Z

Product status links

STD5N60M2

STP5N60M2

STU5N60M2

DS9958 - Rev 5 - October 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...27

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