Datasheet > STU4A60

STU4A60

更新时间： 2024-11-02 06:14:51

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	491K
描述
Bi-Directional Triode Thyristor

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中文翻译

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STU4A60 数据手册

STU4A60

Bi-Directional Triode Thyristor

Features

◆

Repetitive Peak Off-State Voltage : 600V

R.M.S On-State Current ( IT(RMS)= 4 A )

Low On-State Voltage (1.6V(Typ.) @ I_TM

High Commutation dv/dt

)

◆

High Junction temperature(T_J=150℃)

General Description

Sensitive gate triggering Triac is suitable for direct coupling to

TTL, HTL, CMOS and application such as various logic

functions, low power AC switching applications, such as fan

speed, small light controllers and home appliance equipment.

TO-251

Absolute Maximum Ratings (T_J= 25°C unless otherwise specified)

Symbol

Para

Condition

Ratings Units

Repetitive Peak Off-State Voltage

600

_DRM/V_RRM

I_T(RMS)

I_TSM

T_J= 1118 °C

R.M.S On-State Current

Surge On-State Current

4.0

50/60Hz, One cycle, Peak value, non-repetitive

18/20

I²t

1.67

1.5

I t

A s

P_GM

P_G(AV)

I_GM

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

0.1

1.0

V_GM

T_J

Peak Gate Voltage

7.0

Operating Junction Temperature

Storage Temperature

-40~+150

℃

T_STG

Thermal Characteristics

Symbol

Parameter

Value

Units

℃/W

R_θJc

Thermal Resistance Junction to Case(DC)

R_θJA

Thermal Resistance Junction to Ambient(DC)

℃/W

Jan 2009. Rev. 0

T02-1

12 3 4 5

中文翻译

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