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STU4525NL PDF预览

STU4525NL

更新时间: 2024-11-02 04:01:43
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管
页数 文件大小 规格书
8页 888K
描述
N-Channel E nhancement Mode F ield E ffect Transistor

STU4525NL 数据手册

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S TU/D4525NL  
S amHop Microelectronics C orp.  
Arp,20 2005 ver1.2  
N-C hannel E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
) Typ  
7.5 @ VG S = 10V  
15 @ VG S = 4.5V  
25V  
45A  
TO251 and TO 252 P ackage.  
D
D
G
S
G
S TU S E R IE S  
TO-252AA(D-P AK)  
S TD S E R IE S  
TO-251(l-P AK)  
S
ABS OLUTE MAXIMUM R ATING S (T  
A
=25 C unless otherwise noted)  
Limit  
Unit  
V
P arameter  
Drain-S ource Voltage R ating  
Drain-S ource Voltage  
S ymbol  
Vspiked  
30  
25  
20  
45  
V
V
V
V
DS  
G S  
G ate-S ource Voltage  
Drain C urrent-C ontinuous a @ T  
-P ulsed b  
C
=25 C  
I
D
A
A
I
DM  
75  
20  
50  
Drain-S ource Diode Forward C urrent a  
Maximum P ower Dissipation a  
A
I
S
P
D
W
Operating J unction and S torage  
Temperature R ange  
T
J
, TS TG  
-55 to 175  
C
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-C ase  
C
C
/W  
/W  
R
J C  
J A  
3
Thermal R esistance, J unction-to-Ambient a  
R
50  
1

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