Datasheet > STU409DH

STU409DH

更新时间： 2024-11-02 06:14:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
11页	845K
描述
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

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STU409DH 数据手册

S TU409DH

S amHop Microelectronics C orp.

May 29 2007

Dual E nhancement Mode Field E ffect Transistor ( N and P C hannel)

(N-C hannel)

(P -C hannel)

PR ODUCT S UMMAR Y

VDS S

DS (ON) ( m

Ω

) Max

VDS S

DS (ON) ( m

Ω

) Max

24 @ VG S = 10V

35 @ VG S = -10V

50 @ VG S = -4.5V

18A

40V

-14A

-40V

30 @ VG S = 4.5V

D1/D2

G 1

G 2

S 1

G 1

S 2

P -ch

S 2

S 1

N-ch

G 2

TO-252-4L

ABS OLUTE MAXIMUM R ATING S (T

P arameter

=25 C unless otherwise noted)

Unit

S ymbol

N-C hannel P -C hannel

40 -40

Drain-S ource Voltage

G S

G ate-S ource Voltage

-14

-11

25 C

Drain C urrent-C ontinuous @ Tc

70 C

-P ulsed ^a

-50

-6

Drain-S ource Diode Forward C urrent

Tc= 25 C

Maximum P ower Dissipation

Tc= 70 C

7.7

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

13.6

120

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7...11

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