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STU426S PDF预览

STU426S

更新时间: 2024-11-02 06:14:55
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管
页数 文件大小 规格书
9页 175K
描述
N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

STU426S 数据手册

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S TU/D426S  
S amHop Microelectronics Corp.  
ver1.1  
Oct,2007  
N-Channel Logic Level E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
Typ  
)
VDS S  
ID  
R DS (ON) ( m  
Ω
8
@
VGS = 10V  
40V  
53A  
TO-252 and TO-251 Package.  
10 @ VGS = 4.5V  
D
D
G
S
G
S TU S E R IE S  
TO-252AA(D-PAK)  
S TD S E R IE S  
TO-251(l-PAK)  
S
ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)  
S ymbol  
Limit  
40  
Parameter  
Drain-S ource Voltage  
Unit  
V
V
V
DS  
GS  
20  
Gate-S ource Voltage  
V
25 C  
Drain Current-Continuous  
@ Ta=  
53  
100  
20  
I
D
A
A
-Pulseda  
IDM  
Drain-S ource Diode Forward Current  
Avalanche Current c  
Avalanche Energy c  
IS  
A
I
AS  
A
20  
100  
50  
E
AS  
mJ  
P
D
Maximum Power Dissipation  
Ta= 25 C  
W
C
@
Operating Junction and S torage  
Temperature R ange  
-55 to 175  
TJ, TS TG  
THE R MAL CHAR ACTE R IS TICS  
R
JC  
JA  
Thermal R esistance, Junction-to-Case  
Thermal R esistance, Junction-to-Ambient  
3
C/W  
C/W  
R
50  
1

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