Datasheet > STU411D

STU411D

更新时间： 2024-11-23 08:58:43

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
11页	267K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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STU411D 数据手册

Green

Product

STU411D

Ver 1.0

S mHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel)

PRODUCT SUMMARY (P-Channel)

RDS(ON) (mΩ) Max

VDSS

3± @ VGS=10V

4± @ VGS=4.5V

48 @ VGS=-10V

68 @ VGS=-4.5V

15A

40V

-1±A

-40V

D1/D2

S 1

S 2

P-ch

S 2

S 1

N-ch

TO-252-4L

ABSOLUTE MAXIMUM RATINGS T_C=±5 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

N-Channel P-Channel

Drain-Source Voltage

Gate-Source Voltage

±±0

-40

±±0

-1±

V_GS

T_C=±5 C

Drain Current-Continuous ^a

I_D

T_C=70 C

1±

-10

-36

I_DM

-Pulsed

Sigle Pulse Avalanche Energy ^d

E_AS

T_C=±5 C

Maximum Power Dissipation ^a

P_D

T_C=70 C

6.7

Operating Junction and Storage

Temperature Range

T_J^,T_STG

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case ^a

1±

°C/W

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice.

Sep,04,±008

www.samhop.com.tw

12 3 4 5 6 7...11

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