STU405DH

更新时间： 2024-11-23 06:14:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
11页	120K
描述
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

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数据手册

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STU405DH 数据手册

S TU405DH

S amHop Microelectronics Corp.

Nov,20 2007 ver1.0

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

(N-Channel)

(P-Channel)

PR ODUCT S UMMAR Y

VDS S

DS (ON) ( m

) Max

VDS S

DS (ON) ( m

) Max

33 @ VGS = 10V

45 @ VGS = -10V

65 @ VGS = -4.5V

-40V

- 9A

11A

40V

45 @ VGS = 4.5V

D1/D2

S 1

S 2

S 1

P-ch

N-ch

TO-252-4L

ABS OLUTE MAXIMUM R ATINGS (T

Parameter

=25 C unless otherwise noted)

Unit

S ymbol

N-Channel P-Channel

Drain-S ource Voltage

-40

G ate-S ource Voltage

25 C

Drain Current-Continuous @ Tc

70 C

- 9

- 7

-Pulsed ^a

-36

-6

Drain-S ource Diode Forward Current

Tc= 25 C

Maximum Power Dissipation

Tc= 70 C

7.7

Operating Junction and S torage

Temperature R ange

-55 to 175

TJ, TS TG

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

C/W

13.6

120

Thermal R esistance, Junction-to-Ambient

12 3 4 5 6 7...11

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