Datasheet > STU408D

STU408D

更新时间： 2024-11-02 06:14:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
7页	635K
描述
Dual N-Channel E nhancement Mode F ield E ffect Transistor

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数据手册

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STU408D 数据手册

S TU408D

S amHop Microelectronics C orp.

J uly.25 2006

Dual N-C hannel E nhancement Mode Field E ffect Transistor

FE ATUR E S

PR ODUCT S UMMAR Y

S uper high dense cell design for low R DS (ON).

VDS S

R DS (ON) ( m

Ω

) Max

R ugged and reliable.

30 @ VG S = 10V

40 @ VG S =4.5V

TO252-4L package.

E S D P rotected.

40V

16A

D1/D2

G 1

G 2

S 1

TO-252-4L

G 1

N-ch

S 2

S 1

N-ch

G 2

ABS OLUTE MAXIMUM R ATING S (T

P arameter

=25 C unless otherwise noted)

Limit

Unit

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

25 C

Drain C urrent-C ontinuous @ Ta

70 C

13.8

-P ulsed ^a

Drain-S ource Diode Forward C urrent

Ta= 25 C

Maximum P ower Dissipation

Ta=70 C

7.7

Operating J unction and S torage

Temperature R ange

-55 to 175

TJ , TS TG

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

13.6

120

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7

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