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STU3N65M6 PDF预览

STU3N65M6

更新时间: 2024-11-27 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 507K
描述
N沟道650 V、1.4 Ohm典型值、3.5 A MDmesh M6功率MOSFET,IPAK封装

STU3N65M6 数据手册

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STU3N65M6  
Datasheet  
N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET  
in an IPAK package  
Features  
TAB  
V
R
DS(on)  
max.  
I
D
Order code  
DS  
STU3N65M6  
650 V  
1.5 Ω  
3.5 A  
3
2
1
Reduced switching losses  
Lower RDS(on) per area vs previous generation  
Low gate input resistance  
100% avalanche tested  
IPAK  
D(2, TAB)  
Zener-protected  
Applications  
G(1)  
Switching applications  
Description  
S(3)  
AM01476v1_tab  
The new MDmesh M6 technology incorporates the most recent advancements to the  
well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics  
builds on the previous generation of MDmesh devices through its new M6  
technology, which combines excellent RDS(on) per area improvement with one of the  
most effective switching behaviors available, as well as a user-friendly experience for  
maximum end-application efficiency.  
Product status link  
STU3N65M6  
Product summary  
Order code  
Marking  
STU3N65M6  
3N65M6  
IPAK  
Package  
Packing  
Tube  
DS11590 - Rev 3 - July 2023  
www.st.com  
For further information contact your local STMicroelectronics sales office.  

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