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STU402D PDF预览

STU402D

更新时间: 2024-11-02 04:01:43
品牌 Logo 应用领域
三合微科 - SAMHOP 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 633K
描述
Dual N-Channel E nhancement Mode Field Effect Transistor

STU402D 数据手册

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S TU402D  
S amHop Microelectronics C orp.  
MAY.03 2006  
Dual N-C hannel E nhancement Mode Field E ffect Transistor  
PR ODUCT S UMMAR Y  
FE ATUR E S  
S uper high dense cell design for low R DS (ON).  
R ugged and reliable.  
VDS S  
ID  
R DS (ON) ( m  
) Max  
30 @ VG S = 10V  
40 @ VG S =4.5V  
40V  
16A  
TO252-4L package.  
D2  
D1  
D1/D2  
S 1  
G 2  
G 1  
TO-252-4L  
G 1  
S 2  
S 2  
S 1  
N-ch  
N-ch  
G 2  
ABS OLUTE MAXIMUM R ATING S (T  
P arameter  
A
=25 C unless otherwise noted)  
Limit  
Unit  
V
S ymbol  
Drain-S ource Voltage  
V
V
DS  
G S  
40  
20  
V
G ate-S ource Voltage  
25 C  
Drain C urrent-C ontinuous @ Ta  
70 C  
16  
A
A
I
D
13.8  
-P ulsed a  
I
DM  
50  
8
A
A
Drain-S ource Diode Forward C urrent  
I
S
Ta= 25 C  
Maximum P ower Dissipation  
Ta=70 C  
11  
7.7  
P
D
W
C
Operating J unction and S torage  
Temperature R ange  
-55 to 175  
TJ , TS TG  
THE R MAL C HAR AC TE R IS TIC S  
Thermal R esistance, J unction-to-C ase  
C/W  
C/W  
R
J C  
J A  
13.6  
120  
Thermal R esistance, J unction-to-Ambient  
R
1

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