Datasheet > STU3N45K3

STU3N45K3

更新时间： 2024-11-26 12:47:07

品牌	Logo	应用领域
STATEK		晶体晶体管开关脉冲
页数	文件大小	规格书
14页	838K
描述
N-channel 450 V - 3.3 Î© typ., 1.8 A Zener-protected SuperMESH3â¢ Power MOSFET in a IPAK package

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STU3N45K3 数据手册

STU3N45K3

N-channel 450 V - 3.3 Ω typ., 1.8 A Zener-protected

SuperMESH3™ Power MOSFET in a IPAK package

Datasheet

production data

Features

R_DS(on)

max

Order code

V_DSS

I_D

P_w

TAB

STU3N45K3

450 V

< 4 Ω

1.8 A 27 W

• 100% avalanche tested

• Extremely high dv/dt capability

• Gate charge minimized

IPAK

• Very low intrinsic capacitance

• Improved diode reverse recovery

characteristics

• Zener protected

Figure 1. Internal schematic diagram

D(2, TAB)

Applications

• Switching applications

Description

G(1)

This SuperMESH3™ Power MOSFET is the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

This device boasts an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering it suitable for

the most demanding applications.

S(3)

AM01476v1

Table 1.Device summary

Order code

Marking

3N45K3

Package

Packaging

STU3N45K3

IPAK

Tube

June 2013

DocID17206 Rev 3

1/14

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...14

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