Datasheet > 晶体管 > 功率场效应晶体管> STU3055L2-60

STU3055L2-60

更新时间： 2024-11-23 03:04:11

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	853K
描述
N-Channel Enhancement Mode Field Effect Transistor

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STU3055L2-60 数据手册

STU/D3055L2-60

SamHop Microelectronics Corp.

Nov 26 , 2004 Ver1.2

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

RDS(ON) ( m Ω) Max

65 @ VGS = 4.5V

90 @ VGS = 2.5V

20V

14A

TO-252 and TO-251 Package.

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

Drain Current-Continuous @T

=125 C

^b(300ms Pulse Width)

-Pulsed

Drain-Source Diode Forward Current

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

, TSTG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

C/W

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7 8

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