STU3055NL

更新时间： 2024-11-23 03:26:07

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	813K
描述
N-Channel E nhancement Mode Field Effect Transistor

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数据手册

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STU3055NL 数据手册

S TU/D3055NL

S amHop Microelectronics C orp.

P reliminary May.28,2004

N-C hannel E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

) Max

40@ VG S = 10V

50@ VG S = 4.5V

21A

25V

TO-252 and TO-251 P ackage.

S TU S E R IE S

TO-252AA(D-P AK)

S TU S E R IE S

TO-251(l-P AK)

AB S OL UTE MAXIMUM R ATING S

(T =25 C unles s otherwis e noted)

Limit

Unit

P arameter

S ymbol

Drain-S ource Voltage

G S

G ate-S ource Voltage

Drain C urrent-C ontinuous ^a@ T

=125 C

^b(300ms P ulse Width)

-P ulsed

Drain-S ource Diode Forward C urrent ^a

Maximum P ower Dissipation ^a

Operating J unction and S torage

Temperature R ange

, TS TG

-55 to 175

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, J unction-to-C ase

C/W

J C

J A

Thermal R esistance, J unction-to-Ambient

12 3 4 5 6 7 8

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