Datasheet > STU312D

STU312D

更新时间： 2024-11-23 06:14:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
11页	177K
描述
Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

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STU312D 数据手册

S TU312D

Oct 08 2008

S amHop Microelectronics Corp.

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

(N-Channel)

(P-Channel)

PR ODUCT S UMMAR Y

VDS S

R DS (ON) ( m

Ω

) Max

VDS S

R DS (ON) ( m Ω ) Max

24 @ VGS = 10V

34 @ VGS = -10V

54 @ VGS = -4.5V

-30V

-14A

18A

30V

36 @ VGS = 4.5V

D1/D2

S 1

S 2

P-ch

S 2

S 1

N-ch

TO-252-4L

ABS OLUTE MAXIMUM R ATINGS (T

Parameter

=25 C unless otherwise noted)

Unit

S ymbol

VDS

N-Channel P-Channel

Drain-S ource Voltage

-30

VGS

Gate-S ource Voltage

25 C

Drain Current-Continuous @ Tc

70 C

-14

-12

-Pulsed ^a

IDM

-50

-6

Drain-S ource Diode Forward Current

Tc= 25 C

Maximum Power Dissipation

Tc= 70 C

7.7

Operating Junction and S torage

Temperature R ange

-55 to 175

TJ, TS TG

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

C/W

13.6

120

Thermal R esistance, Junction-to-Ambient

12 3 4 5 6 7...11

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