STU302S

更新时间： 2024-11-23 03:26:07

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
9页	196K
描述
N-Channel Logic Level E nhancement Mode Field Effect Transistor

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数据手册

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STU302S 数据手册

S TU/D302S

S amHop Microelectronics Corp.

Apr 03,2006

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

PR ODUCT S UMMAR Y

FE ATUR E S

S uper high dense cell design for low R DS (ON).

R ugged and reliable.

VDS S

R DS (ON) ( m

Ω

)

Max

@ VGS = 10V

30V

50 A

TO-252 and TO-251 Package.

12 @ VGS = 4.5V

S TU S E R IE S

TO-252AA(D-PAK)

S TD S E R IE S

TO-251(l-PAK)

ABS OLUTE MAXIMUM R ATINGS (Ta=25 C unless otherwise noted)

Limit

Unit

Parameter

S ymbol

Drain-S ource Voltage

G ate-S ource Voltage

Drain Current-Continuous @ T

-Pulsed ^a

C=25 C

180

Drain-S ource Diode Forward Current

@ Tc=25 C

Maximum Power Dissipation

Operating and S torage

Temperature R ange

-55 to 175

TJ, TS TG

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

C/W

Thermal R esistance, Junction-to-Ambient

12 3 4 5 6 7...9

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