Datasheet > STU3055L2

STU3055L2

更新时间： 2024-11-25 21:54:19

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	720K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STU3055L2 数据手册

STU/D3055L2

SamHop Microelectronics Corp.

Feb.01 2005 ver1.3

N-Channel Logic Level Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

RDS(ON) ( m

Ω

)

Max

40 @ VGS = 10V

45 @ VGS = 4.5V

20V

18A

TO-252 and TO-251 Package.

STU SERIES

TO-252AA(D-PAK)

STD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VDS

VGS

Gate-Source Voltage

Drain Current-Continuous @T

-Pulsed ^a

=25 C

Drain-Source Diode Forward Current

Maximum Power Dissipation

@Tc=25 C

Operating and Storage

Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

12 3 4 5 6 7

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