Datasheet > STU13NB60

STU13NB60

更新时间： 2024-10-01 22:19:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	64K
描述
N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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STU13NB60 数据手册

STU13NB60

N-CHANNEL ENHANCEMENT MODE

PowerMESH

MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STU13NB60

600 V

< 0.45 Ω

12.6 A

■

TYPICAL R_DS(on)= 0.4 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

± 30V GATE TO SOURCE VOLTAGE RATING

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R_DS(on)per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

Max220

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_DGR

V_GS

I_D

600

± 30

12.6

I_D

7.9

_DM(• )

50.4

P_tot

Total Dissipation at T_c= 25 ^oC

160

Derating Factor

1.28

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

4.5

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤13A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/6

October 1997

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6

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