生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.81 | Is Samacsys: | N |
雪崩能效等级(Eas): | 525 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 80 A | 最大漏极电流 (ID): | 80 A |
最大漏源导通电阻: | 0.0049 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 110 W | 最大脉冲漏极电流 (IDM): | 320 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
STD100N3LF3 | STMICROELECTRONICS |
功能相似 ![]() |
N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STU1530PL | SAMHOP |
获取价格 |
P-Channel E nhancement Mode MOSFET |
![]() |
STU16N65M2 | STMICROELECTRONICS |
获取价格 |
N沟道650 V、0.32 Ohm典型值、11 A MDmesh M2功率MOSFET,I |
![]() |
STU16N65M5 | STMICROELECTRONICS |
获取价格 |
12A, 650V, 0.279ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 |
![]() |
STU16NB50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.28ohm - 15.6A-Max220 PowerMESH MOSFET |
![]() |
STU16NB50I | STMICROELECTRONICS |
获取价格 |
TRANSISTOR MOSFET MAX-220 |
![]() |
STU16NC50 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 500V - 0.22ohm - 16A Max220 PowerMesh?II MOSFET |
![]() |
STU1855PL | SAMHOP |
获取价格 |
P-Channel E nhancement Mode Field Effect Transistor |
![]() |
STU1855PLS | SAMHOP |
获取价格 |
P-Channel E nhancement Mode Field Effect Transistor |
![]() |
STU1955NL | SAMHOP |
获取价格 |
N-Channel E nhancement Mode Field Effect Transistor |
![]() |
STU1N120 | STMICROELECTRONICS |
获取价格 |
0.5A, 1200V, 38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, IPAK-3 |
![]() |