Datasheet > STU13N60M2

STU13N60M2

更新时间： 2024-11-24 14:57:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	583K
描述
N沟道600 V、0.35 Ohm典型值、11 A MDmesh M2功率MOSFET，IPAK封装

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中文翻译

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技术参数
数据手册

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STU13N60M2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	2.13
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STU13N60M2 数据手册

STP13N60M2

Datasheet

N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET

in a TO-220 package

Features

TAB

DS(on)

max.

Order code

STP13N60M2

600 V

380 mΩ

11 A

•

Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

S(3)

AM01476v1_tab

Product status link

STP13N60M2

Product summary

Order code

STP13N60M2

Marking

Package

Packing

13N60M2

TO-220

Tube

DS14469 - Rev 1 - October 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

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