是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.91 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 430 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 900 V |
最大漏极电流 (Abs) (ID): | 7 A | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 1.38 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 160 W |
最大脉冲漏极电流 (IDM): | 28 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STU8NC90ZI | STMICROELECTRONICS |
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OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | |
STU8NM50N | STMICROELECTRONICS |
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N-channel 500 V, 0.73 Ω typ., 5 A MDmeshâ¢I | |
STU90N4F3 | STMICROELECTRONICS |
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N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - | |
STU9410 | SAMHOP |
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N-Channel E nhancement Mode F ield E ffect Transistor | |
STU95N2LH5 | STMICROELECTRONICS |
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N-channel 25 V - 0.0038 ヘ - 80 A - DPAK - IPA | |
STU95N3LLH6 | STMICROELECTRONICS |
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N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK | |
STU95N4F3 | STMICROELECTRONICS |
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N-channel 40V - 5.4mOHM - 80A - DPAK - TO-220 - IPAK STripFET TM Power MOSFET | |
STU9916L | SAMHOP |
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N-Channel Enhancement Mode Field Effect Transistor | |
STU9N60M2 | STMICROELECTRONICS |
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N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET, | |
STU9NA60 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |