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STU8NC90Z PDF预览

STU8NC90Z

更新时间: 2024-11-15 22:18:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 415K
描述
N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET

STU8NC90Z 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliant风险等级:5.91
Is Samacsys:N雪崩能效等级(Eas):430 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):7 A最大漏极电流 (ID):7 A
最大漏源导通电阻:1.38 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
最大脉冲漏极电流 (IDM):28 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STU8NC90Z 数据手册

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STU8NC90Z  
STU8NC90ZI  
N-CHANNEL 900V - 1.1- 7.6A Max220/I-Max220  
Zener-Protected PowerMESH™III MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STU8NC90Z  
STU9NC90ZI  
900 V  
900 V  
< 1.38Ω  
< 1.38Ω  
7 A  
7 A  
TYPICAL R (on) = 1.1Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
GATE-TO-SOURCE ZENER DIODES  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
2
1
I-Max220  
Max220  
DESCRIPTION  
The third generation of MESH OVERLAY™ Power  
MOSFETs for very high voltage exhibits unsur-  
passed on-resistance per unit area while integrating  
back-to-back Zener diodes between gate and  
source. Such arrangement gives extra ESD capabil-  
ity with higher ruggedness performance as request-  
ed by a large variety of single-switch applications.  
APPLICATIONS  
SINGLE-ENDED SMPS IN MONITORS,  
COMPUTER AND INDUSTRIAL APPLICATION  
WELDING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STU8NC90Z  
STU8NC90ZI  
V
Drain-source Voltage (V = 0)  
900  
900  
±25  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
7
7(*)  
4.4(*)  
28(*)  
55  
A
D
C
I
Drain Current (continuos) at T = 100°C  
4.4  
28  
A
D
C
I
(1)  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
160  
1.28  
W
TOT  
C
Derating Factor  
0.44  
W/°C  
mA  
KV  
V/ns  
V
I
Gate-source Current  
±50  
4
GS  
V
Gate source ESD(HBM-C=100pF, R=15KΩ)  
Peak Diode Recovery voltage slope  
Insulation Winthstand Voltage (DC)  
Storage Temperature  
ESD(G-S)  
dv/dt(  
)  
3
V
ISO  
--  
2000  
T
stg  
–65 to 150  
150  
°C  
°C  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I 7A, di/dt 100A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
(*)Limited only by maximum temperature allowed  
Sep 2000  
1/10  

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