Datasheet > FDU8874

FDU8874

更新时间： 2024-11-01 22:29:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	133K
描述
N-Channel PowerTrench MOSFET 30V, 116A

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数据手册
替代型号

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FDU8874 数据手册

September 2004

FDD8874 / FDU8874

N-Channel PowerTrench^®MOSFET

30V, 116A, 5.1mΩ

General Description

Features

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

•

= 5.1mΩ, V

= 10V, I = 35A

DS(ON)

= 6.4mΩ, V

= 4.5V, I = 35A

DS(ON)

High performance trench technology for extremely low

and fast switching speed.

DS(ON)

•

Low gate charge

Applications

High power and current handling capability

•

DC/DC converters

I-PAK

(TO-251AA)

D-PAK

TO-252

(TO-252)

G D S

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

DSS

±20

116

103

Continuous (T = 25 C, V

= 10V) (Note 1)

= 4.5V) (Note 1)

= 10V, with R = 52 C/W)

θJA

Continuous (T = 25 C, V

Continuous (T

Pulsed

= 25 C, V

amb

Figure 4

240

Single Pulse Avalanche Energy (Note 2)

Power dissipation

110

Derate above 25 C

0.73

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

θJC

θJA

Thermal Resistance Junction to Case TO-252, TO-251

1.36

100

C/W

Thermal Resistance Junction to Ambient TO-252, TO-251

C/W

Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

FDD8874

Device

FDD8874

FDU8874

Package

TO-252AA

TO-251AA

Reel Size

13”

Tape Width

Quantity

12mm

N/A

2500 units

75 units

FDU8874

Tube

FDD8874 / FDU8874 Rev. B

12 3 4 5 6 7...11

中文翻译

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FDU8874 替代型号

型号	品牌	替代类型	描述	数据表
STU85N3LH5	STMICROELECTRONICS	功能相似	N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220

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