FDU8878_NL

更新时间： 2024-11-03 13:07:47

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FDU8878_NL 数据手册

April 2008

FDD8878 / FDU8878

N-Channel PowerTrench^®MOSFET

30V, 40A, 15mΩ

General Description

Features

r_DS(ON)= 15mΩ, V_GS= 10V, I_D= 35A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)= 18.5mΩ, V_GS= 4.5V, I_D= 35A

_DS(ON)and fast switching speed.

High performance trench technology for extremely low

r_DS(ON)

Low gate charge

Application

DC / DC Converters

High power and current handling capability

RoHS Compliant

I-PAK

(TO-251AA)

D-PAK

(TO-252)

G D S

www.fairchildsemi.com

FDD8878 / FDU8878 Rev. A4

12 3 4 5 6 7...12

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