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FDU8878 PDF预览

FDU8878

更新时间: 2024-11-02 22:29:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关
页数 文件大小 规格书
12页 234K
描述
N-Channel PowerTrench MOSFET

FDU8878 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:7.13
雪崩能效等级(Eas):25 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):35 A最大漏源导通电阻:0.0185 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251AA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDU8878 数据手册

 浏览型号FDU8878的Datasheet PDF文件第2页浏览型号FDU8878的Datasheet PDF文件第3页浏览型号FDU8878的Datasheet PDF文件第4页浏览型号FDU8878的Datasheet PDF文件第5页浏览型号FDU8878的Datasheet PDF文件第6页浏览型号FDU8878的Datasheet PDF文件第7页 
January 2005  
FDD8878 / FDU8878  
N-Channel PowerTrench® MOSFET  
30V, 40A, 15mΩ  
Features  
General Description  
rDS(ON) = 15m, VGS = 10V, ID = 35A  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
rDS(ON) = 18.5m, VGS = 4.5V, ID = 35A  
High performance trench technology for extremely low  
rDS(ON)  
r
DS(ON) and fast switching speed.  
Low gate charge  
High power and current handling capability  
Applications  
DC/DC converters  
D
S
D
G
G
I-PAK  
(TO-251AA)  
S
D-PAK  
(TO-252)  
G D S  
www.fairchildsemi.com  
©2005 Fairchild Semiconductor Corporation  
FDD8878 / FDU8878 Rev. A3  
1

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