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STU7NM60N PDF预览

STU7NM60N

更新时间: 2024-11-02 12:26:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
17页 885K
描述
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

STU7NM60N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-251包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:43 weeks 2 days
风险等级:1.68Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:366618
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-251 (IPAK)
Samacsys Released Date:2018-08-13 12:32:41Is Samacsys:N
雪崩能效等级(Eas):119 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):5 A最大漏源导通电阻:0.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-251
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STU7NM60N 数据手册

 浏览型号STU7NM60N的Datasheet PDF文件第2页浏览型号STU7NM60N的Datasheet PDF文件第3页浏览型号STU7NM60N的Datasheet PDF文件第4页浏览型号STU7NM60N的Datasheet PDF文件第5页浏览型号STU7NM60N的Datasheet PDF文件第6页浏览型号STU7NM60N的Datasheet PDF文件第7页 
STD7NM60N, STF7NM60N  
STP7NM60N, STU7NM60N  
N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK  
second generation MDmesh™ Power MOSFET  
Features  
VDSS @  
TJmax  
RDS(on)  
max.  
Order codes  
ID  
3
2
3
2
1
1
STD7NM60N  
STF7NM60N  
STP7NM60N  
STU7NM60N  
TO-220  
IPAK  
650 V  
< 0.9 Ω  
5 A  
3
100% avalanche tested  
1
3
2
1
Low input capacitance and gate charge  
Low gate input resistance  
DPAK  
TO-220FP  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
These devices are N-channel Power MOSFETs  
realized using the second generation of  
TM  
MDmesh technology. It applies the benefits of  
the multiple drain process to STMicroelectronics’  
well-known PowerMESH™ horizontal layout  
structure. The resulting product offers improved  
on-resistance, low gate charge, high dv/dt  
'ꢅꢁꢇ  
capability and excellent avalanche characteristics.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD7NM60N  
STF7NM60N  
STP7NM60N  
STU7NM60N  
Tape and reel  
Tube  
TO-220FP  
TO-220  
IPAK  
7NM60N  
Tube  
Tube  
November 2010  
Doc ID 16472 Rev 4  
1/17  
www.st.com  
17  

STU7NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STU10NM60N STMICROELECTRONICS

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N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET
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