Datasheet > STU7N65M2

STU7N65M2

更新时间： 2024-11-28 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	876K
描述
N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET，IPAK封装

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中文翻译

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技术参数
数据手册

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STU7N65M2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	43 weeks 2 days
风险等级：	1.52	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STU7N65M2 数据手册

STP7N65M2, STU7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFETs in TO-220 and IPAK packages

Datasheet - production data

Features

TAB

R_DS(on)

max

Order code

V_DS

I_D

STP7N65M2

STU7N65M2

650 V

1.15 Ω

5 A

TAB

TO-220



Extremely low gate charge

Excellent output capacitance (C_oss) profile

100% avalanche tested

IPAK

Zener-protected

Applications

Figure 1: Internal schematic diagram



Switching applications

D(2, TAB)

Description

These devices are N-channel Power MOSFETs

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated with an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the

most demanding high efficiency converters.

G(1)

S(3)

AM01476v1_tab

Table 1: Device summary

Order code

STP7N65M2

STU7N65M2

Marking

7N65M2

Package

Packaging

Tube

TO-220

IPAK

Tube

May 2015

DocID026788 Rev 3

1/18

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...18

中文翻译

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