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STU7N65M2 PDF预览

STU7N65M2

更新时间: 2024-11-03 14:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 876K
描述
N沟道650 V、0.98 Ohm典型值、5 A MDmesh M2功率MOSFET,IPAK封装

STU7N65M2 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:43 weeks 2 days
风险等级:1.52峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

STU7N65M2 数据手册

 浏览型号STU7N65M2的Datasheet PDF文件第2页浏览型号STU7N65M2的Datasheet PDF文件第3页浏览型号STU7N65M2的Datasheet PDF文件第4页浏览型号STU7N65M2的Datasheet PDF文件第5页浏览型号STU7N65M2的Datasheet PDF文件第6页浏览型号STU7N65M2的Datasheet PDF文件第7页 
STP7N65M2, STU7N65M2  
N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2  
Power MOSFETs in TO-220 and IPAK packages  
Datasheet - production data  
Features  
TAB  
RDS(on)  
max  
Order code  
VDS  
ID  
STP7N65M2  
STU7N65M2  
650 V  
650 V  
1.15 Ω  
1.15 Ω  
5 A  
5 A  
3
2
TAB  
1
TO-220  
Extremely low gate charge  
Excellent output capacitance (Coss) profile  
100% avalanche tested  
3
2
IPAK  
1
Zener-protected  
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
D(2, TAB)  
Description  
These devices are N-channel Power MOSFETs  
developed using the MDmesh™ M2 technology.  
Thanks to the strip layout associated with an  
improved vertical structure, the device exhibits  
both low on-resistance and optimized switching  
characteristics. It is therefore suitable for the  
most demanding high efficiency converters.  
G(1)  
S(3)  
AM01476v1_tab  
Table 1: Device summary  
Order code  
STP7N65M2  
STU7N65M2  
Marking  
7N65M2  
7N65M2  
Package  
Packaging  
Tube  
TO-220  
IPAK  
Tube  
May 2015  
DocID026788 Rev 3  
1/18  
www.st.com  
This is information on a product in full production.  

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