Datasheet > STU7LN80K5

STU7LN80K5

更新时间： 2024-11-03 14:57:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	394K
描述
N沟道800 V、0.95 Ohm典型值、5 A MDmesh K5功率MOSFET，IPAK封装

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STU7LN80K5 数据手册

STU7LN80K5

N-channel 800 V, 0.95 Ω typ., 5 A MDmesh™ K5

Power MOSFET in a IPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STU7LN80K5

800 V

1.15 Ω

5 A

•

Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra-low gate charge

100% avalanche tested

Zener-protected

IPAK

Applications

•

Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

IPAK

STU7LN80K5

7LN80K5

Tube

January 2016

DocID028830 Rev 1

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

中文翻译

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