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STP16NE06 PDF预览

STP16NE06

更新时间: 2024-11-01 22:20:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 341K
描述
N - CHANNEL 60V - 0.08 ohm - 16A - TO-220/TO-220FP STripFET POWER MOSFET

STP16NE06 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N雪崩能效等级(Eas):80 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):60 W最大脉冲漏极电流 (IDM):64 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP16NE06 数据手册

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STP16NE06  
STP16NE06FP  
®
N - CHANNEL 60V - 0.08 - 16A - TO-220/TO-220FP  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP16NE06  
STP16NE06FP  
60 V  
60 V  
< 0.100 Ω  
< 0.100 Ω  
16 A  
11 A  
TYPICAL RDS(on) = 0.08 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
HIGH dV/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
DESCRIPTION  
TO-220  
TO-220FP  
This Power Mosfet is the latest development of  
SGS-THOMSON unique "Single Feature Size"  
process whereby a single body is implanted on a  
strip layout structure. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP16NE06 STP16NE06FP  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
60  
V
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
16  
10  
64  
60  
0.4  
11  
7
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
IDM()  
Ptot  
Drain Current (pulsed)  
64  
A
o
Total Dissipation at Tc = 25 C  
30  
W
W/oC  
Derating Factor  
0.2  
2000  
VISO  
dV/dt  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
6
V/ns  
oC  
oC  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 16 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
New RDS (on) spec. starting from JULY 98  
1/9  
June 1998  

STP16NE06 替代型号

型号 品牌 替代类型 描述 数据表
MTP3055E STMICROELECTRONICS

类似代替

N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET
MTP3055VL FAIRCHILD

功能相似

N-Channel Logic Level Enhancement Mode Field Effect Transistor
RFP3055LE FAIRCHILD

功能相似

11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs

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