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STP16NK65Z-S

更新时间： 2024-11-01 21:54:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	288K
描述
N-CHANNEL 600V - 0.38з - 14A TO-220 / I2SPAK / TO-247 Zener-Protected SuperMESH⑩ MOSFET

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中文翻译

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数据手册

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STP16NK65Z-S 数据手册

STP16NK60Z - STB16NK60Z-S

STW16NK60Z

N-CHANNEL 600V - 0.38Ω - 14A TO-220 / I²SPAK / TO-247

Zener-Protected SuperMESH™ MOSFET

TYPE

DSS

DS(on)

STP16NK60Z

STB16NK60Z-S

STW16NK60Z

600 V < 0.42 Ω 14 A

190 W

■

TYPICAL R (on) = 0.38 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

VERY LOW INTRINSIC CAPACITANCES

VERY GOOD MANUFACTURING

REPEATIBILITY

I SPAK

TO-220

TO-247

DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

■

IDEAL FOR OFF-LINE POWER SUPPLIES

ORDER CODE

PART NUMBER

MARKING

P16NK60Z

B16NK60Z

PACKAGE

PACKAGING

TUBE

STP16NK60Z

STB16NK60Z-S

STW16NK60Z

TO-220

TUBE

I SPAK

W16NK60Z

TO-247

TUBE

March 2004

1/11

12 3 4 5 6 7...11

中文翻译

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