5秒后页面跳转
STP180N10F3 PDF预览

STP180N10F3

更新时间: 2024-11-23 08:59:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 256K
描述
N-channel 100 V, 4.0 mΩ, 120 A STripFET? Power MOSFET D2PAK, TO-220

STP180N10F3 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0048 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):315 W
最大脉冲漏极电流 (IDM):480 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP180N10F3 数据手册

 浏览型号STP180N10F3的Datasheet PDF文件第2页浏览型号STP180N10F3的Datasheet PDF文件第3页浏览型号STP180N10F3的Datasheet PDF文件第4页浏览型号STP180N10F3的Datasheet PDF文件第5页浏览型号STP180N10F3的Datasheet PDF文件第6页浏览型号STP180N10F3的Datasheet PDF文件第7页 
STB180N10F3  
STP180N10F3  
N-channel 100 V, 4.0 m, 120 A STripFET™ Power MOSFET  
D2PAK, TO-220  
Preliminary Data  
Features  
Type  
VDSS  
RDS(on)  
ID  
STB180N10F3  
STP180N10F3  
100 V  
100 V  
4.5 m  
4.8 mΩ  
120 A(1)  
120 A(1)  
1. Value limited by wire bonding  
3
3
1
2
1
Ultra low on-resistance  
100% avalanche tested  
D2PAK  
TO-220  
Application  
High current switching applications  
Description  
Figure 1.  
Internal schematic diagram  
This n-channel enhancement mode Power  
MOSFET is the latest refinement of  
STMicroelectronics unique “single feature size”  
strip-based process with less critical alignment  
steps and therefore a remarkable manufacturing  
reproducibility. The resulting transistor shows  
extremely high packing density for low on  
resistance, rugged avalanche characteristics and  
low gate charge.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D2PAK  
TO-220  
Packaging  
STB180N10F3  
STP180N10F3  
180N10F3  
180N10F3  
Tape and reel  
Tube  
August 2008  
Rev 1  
1/12  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
12  

STP180N10F3 替代型号

型号 品牌 替代类型 描述 数据表
STP185N10F3 STMICROELECTRONICS

类似代替

N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220

与STP180N10F3相关器件

型号 品牌 获取价格 描述 数据表
STP180N55 STMICROELECTRONICS

获取价格

N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET
STP180N55F3 STMICROELECTRONICS

获取价格

N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 S
STP180NS04ZC STMICROELECTRONICS

获取价格

N-channel clamped 3.5 mΩ - 120 A TO-220 fully
STP185N10F3 STMICROELECTRONICS

获取价格

N-channel 100 V, 4.0 mΩ, 120 A, D2PAK, TO-220
STP185N55 STMICROELECTRONICS

获取价格

N-channel 55V - 2.9mohm - 120A - D2PAK/TO-220
STP185N55F3 STMICROELECTRONICS

获取价格

N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 S
STP18N10 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 18A I(D) | TO-220
STP18N10FI ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-220VAR
STP18N55M5 STMICROELECTRONICS

获取价格

N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V P
STP18N60DM2 STMICROELECTRONICS

获取价格

N沟道600 V、0.260 Ohm典型值、12 A MDmesh DM2功率MOSFET