Datasheet > STP18N65M2

STP18N65M2

更新时间： 2024-11-24 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	525K
描述
N沟道650 V、0.275 Ohm典型值、12 A MDmesh M2功率MOSFET，TO-220封装

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STP18N65M2 数据手册

STI18N65M2, STP18N65M2

N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2

Power MOSFET in I²PAK and TO-220 packages

Datasheet

production data

Features

Order code

V_DS

R_DS(on)max

I_D

TAB

STI18N65M2

STP18N65M2

650V

0.33ꢀ

12 A

• Extremely low gate charge

I PAK

TO-220

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

• Zener-protected

Applications

Figure 1. Internal schematic diagram

, TAB

• Switching applications

• LLC converters, resonant converters

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Table 1. Device summary

Order code

Marking

Package

Packaging

STI18N65M2

STP18N65M2

I²PAK

18N65M2

Tube

TO-220

January 2015

DocID026870 Rev 2

1/15

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...15

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