Datasheet > STP200N12F7

STP200N12F7

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	487K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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STP200N12F7 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.76
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP200N12F7 数据手册

STP200N12F7

N-channel 120 V, 3.7 mΩ typ., 180 A STripFET™ F7

Power MOSFET in a TO-220 package

Datasheet

target specification

Features

V_DS

R_DS(on)max.

I_D

Order code

TAB

STP200N12F7

120 V

4.1 mΩ

180 A

• Ultra low on-resistance

• 100% avalanche tested

Applications

TO-220

• Switching applications

Description

Figure 1. Internal schematic diagram

This N-channel Power MOSFET utilizes the

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low

onstate resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

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Table 1. Device summary

Order code

Marking

200N12F7

Package

Packaging

STP200N12F7

TO-220

Tube

July 2014

DocID025627 Rev 2

1/11

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

www.st.com

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