Datasheet > STP190N55LF3

STP190N55LF3

更新时间： 2024-11-24 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	643K
描述
N沟道55 V、2.9 mOhm典型值、120 A STripFET(TM) 功率MOSFET，TO-220封装

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STP190N55LF3 数据手册

STP190N55LF3

N-channel 55 V, 2.9 mΩ, 120 A, TO-220

STripFET™ Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

P_D

STP190N55LF3 55 V < 3.7 mΩ 120 A 312 W

■ Logic level drive

■ 100% avalanche tested

Application

TO-220

■ Switching applications

– Automotive

Description

Figure 1.

Internal schematic diagram

This n-channel enhancement mode Power

MOSFET is the latest refinement of

STMicroelectronics' unique “single feature size”

strip-based process, which has decreased the

critical alignment steps, offering remarkable

manufacturing reproducibility. The outcome is a

transistor with extremely high packing density for

low on resistance, rugged avalanche

characteristics and low gate charge.

Table 1.

Order code

STP190N55LF3

Device summary

Marking

Package

TO-220

Packaging

190N55LF3

Tube

November 2008

Rev1

1/12

www.st.com

12 3 4 5 6 7...12

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