Datasheet > STP18N60M2

STP18N60M2

更新时间： 2024-11-24 14:57:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
27页	856K
描述
N沟道600 V、0.255 Ohm典型值、13 A MDmesh M2功率MOSFET，TO-220封装

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STP18N60M2 数据手册

STB18N60M2, STI18N60M2

STP18N60M2, STW18N60M2

Datasheet

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D²PAK,

I²PAK, TO-220 and TO-247 packages

TAB

Features

TAB

@ T

max.

Order codes

STB18N60M2

STI18N60M2

STP18N60M2

STW18N60M2

Package

D²PAK

I²PAK

Jmax

DS(on)

I²PAK

650 V

0.280 Ω

13 A

D²PAK

TO-220

TO-247

TAB

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

TO-247

TO-220

(

)

2, TAB

Application

•

Switching applications

LLC converters, resonant converters

(

)

Description

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

technology. Thanks to their strip layout and improved vertical structure, these devices

exhibit low on-resistance and optimized switching characteristics, rendering them

suitable for the most demanding high-efficiency converters.

(

)

AM15572V1

Product status link

STB18N60M2

STI18N60M2

STP18N60M2

STW18N60M2

DS9714 - Rev 4 - November 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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