Datasheet > STP180N55

STP180N55

更新时间： 2024-11-02 08:59:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	176K
描述
N-CHANNEL 55V - 2.9m-ohm - 120A - D-2 PAK - TO-220 MDmesh-TM Low Voltage Power MOSFET

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数据手册

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STP180N55 数据手册

STB180N55

STP180N55

N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220

MDmesh™ Low Voltage Power MOSFET

TARGET SPECIFICATION

General features

Type

DSS

DS(on)

STB180N55

STP180N55

55V

3.5mΩ

3.8mΩ

120A (Note 1)

■ ULTRA LOW ON-RESISTANCE

■ 100% AVALANCHE TESTED

D²PAK

TO-220

Description

This N-Channel enhancement mode MOSFET is

the latest refinement of STMicroelectronic unique

“Single Feature Size™“ strip-based process with

less critical aligment steps and therefore a

remarkable manufacturing reproducibility. The

resulting transistor shows extremely high packing

density for low on-resistance, rugged avalanche

characteristics and low gate charge.

Internal schematic diagram

Applications

■ HIGH CURRENT SWITCHING APPLICATION

Order codes

Sales Type

Marking

Package

Packaging

STB180N55

STP180N55

B180N55

P180N55

D²PAK

TAPE & REEL

TUBE

TO-220

Rev 1

1/11

January 2006

This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice

www.st.com

12 3 4 5 6 7...11

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