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STP16NM50N PDF预览

STP16NM50N

更新时间: 2024-11-02 04:01:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 555K
描述
N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STP16NM50N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.81雪崩能效等级(Eas):470 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):15 A最大漏极电流 (ID):15 A
最大漏源导通电阻:0.26 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP16NM50N 数据手册

 浏览型号STP16NM50N的Datasheet PDF文件第2页浏览型号STP16NM50N的Datasheet PDF文件第3页浏览型号STP16NM50N的Datasheet PDF文件第4页浏览型号STP16NM50N的Datasheet PDF文件第5页浏览型号STP16NM50N的Datasheet PDF文件第6页浏览型号STP16NM50N的Datasheet PDF文件第7页 
STB16NM50N - STF/I16NM50N  
STP16NM50N - STW16NM50N  
N-channel 500 V - 0.21 - 15 A MDmesh™ II Power MOSFET  
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
2
1
1
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
550 V  
550 V  
550 V  
550 V  
550 V  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
0.26 Ω  
15 A  
15 A  
15 A (1)  
PAK  
PAK  
3
2
1
15 A  
TO-247  
15 A  
3
3
2
2
1
1
1. Limited only by maximum temperature allowed  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB16NM50N  
STI16NM50N  
STF16NM50N  
STP16NM50N  
STW16NM50N  
B16NM50N  
I16NM50N  
F16NM50N  
P16NM50N  
W16NM50N  
Tape and reel  
Tube  
PAK  
TO-220FP  
TO-220  
Tube  
Tube  
TO-247  
Tube  
March 2008  
Rev 2  
1/18  
www.st.com  
18  

STP16NM50N 替代型号

型号 品牌 替代类型 描述 数据表
STI16NM50N STMICROELECTRONICS

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N-channel 500 V - 0.21 ヘ - 15 A MDmesh⑩ II Po
STB20NM50-1 STMICROELECTRONICS

功能相似

N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET

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