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STP17N80K5 PDF预览

STP17N80K5

更新时间: 2024-11-24 14:58:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 735K
描述
N沟道800 V、0.29 Ohm典型值、14 A MDmesh K5功率MOSFET,TO-220封装

STP17N80K5 技术参数

生命周期:ActiveReach Compliance Code:compliant
Factory Lead Time:17 weeks风险等级:5.28
Base Number Matches:1

STP17N80K5 数据手册

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STP17N80K5  
N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5  
Power MOSFET in a TO-220 package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
STP17N80K5  
800 V  
0.34 Ω  
14 A  
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
100% avalanche tested  
Zener-protected  
Applications  
Switching applications  
Figure 1: Internal schematic diagram  
Description  
This very high voltage N-channel Power  
MOSFET is designed using MDmesh™ K5  
technology based on an innovative proprietary  
vertical structure. The result is a dramatic  
reduction in on-resistance and ultra-low gate  
charge for applications requiring superior power  
density and high efficiency.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STP17N80K5  
17N80K5  
TO-220  
Tube  
May 2016  
DocID027702 Rev 2  
1/13  
www.st.com  
This is information on a product in full production.  

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