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STP16NS25 PDF预览

STP16NS25

更新时间: 2024-11-22 22:20:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 332K
描述
N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY⑩ MOSFET

STP16NS25 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N雪崩能效等级(Eas):600 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):64 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP16NS25 数据手册

 浏览型号STP16NS25的Datasheet PDF文件第2页浏览型号STP16NS25的Datasheet PDF文件第3页浏览型号STP16NS25的Datasheet PDF文件第4页浏览型号STP16NS25的Datasheet PDF文件第5页浏览型号STP16NS25的Datasheet PDF文件第6页浏览型号STP16NS25的Datasheet PDF文件第7页 
STP16NS25  
STP16NS25FP  
N-CHANNEL 250V - 0.23- 16A TO-220 / TO-220FP  
MESH OVERLAY™ MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STP16NS25  
STP16NS25FP  
250 V  
250 V  
< 0.28 Ω  
< 0.28 Ω  
16 A  
16 A  
TYPICAL R (on) = 0.23 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
3
3
2
2
1
1
TO-220  
TO-220FP  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performance. The new patented STrip layout cou-  
pled with the Company’s proprietary edge termina-  
tion structure, makes it suitable in coverters for  
lighting applications.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-DC CONVERTERS FOR TELECOM,  
INDUSTRIAL, AND LIGHTING EQUIPMENT  
IDEAL FOR MONITOR’s B+ FUNCTION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP16NS25  
STP16NS25FP  
V
Drain-source Voltage (V = 0)  
250  
250  
± 20  
V
V
V
A
A
A
W
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
I
Drain Current (continuos) at T = 25°C  
16  
11  
16(*)  
11(*)  
64(*)  
40  
D
C
I
Drain Current (continuos) at T = 100°C  
D
C
I
( )  
Drain Current (pulsed)  
64  
140  
1
DM  
P
TOT  
Total Dissipation at T = 25°C  
C
Derating Factor  
0.33  
W/°C  
V/ns  
V
dv/dt (1)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
Storage Temperature  
5
V
ISO  
-
2500  
T
stg  
–65 to 150  
°C  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1) I 16A, di/dt300 A/µs, V V  
, TjT  
jMAX  
SD  
DD  
(BR)DSS  
(*) Limited only by maximum temperature allowed  
May 2002  
1/9  

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