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STP16NF06LFP PDF预览

STP16NF06LFP

更新时间: 2024-11-01 21:54:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 339K
描述
N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET⑩ II POWER MOSFET

STP16NF06LFP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.85雪崩能效等级(Eas):127 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):25 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP16NF06LFP 数据手册

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STP16NF06L  
STP16NF06LFP  
N-CHANNEL 60V - 0.07 - 16A TO-220/TO-220FP  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STP16NF06L  
STP60NF06LFP  
60 V  
60 V  
<0.09 Ω  
<0.09 Ω  
16 A  
11 A  
TYPICAL R (on) = 0.07Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
o
LOW GATE CHARGE AT 100 C  
LOW THRESHOLD DRIVE  
3
3
2
2
1
1
DESCRIPTION  
TO-220  
TO-220FP  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
steps  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP16NF06L  
STP16NF06LFP  
V
Drain-source Voltage (V = 0)  
60  
60  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
± 16  
V
I
Drain Current (continuous) at T = 25°C  
16  
11  
11(*)  
7.5(*)  
44(*)  
25  
A
D
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
()  
Drain Current (pulsed)  
64  
45  
0.3  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.17  
W/°C  
V/ns  
mJ  
V
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Insulation Withstand Voltage (DC)  
Storage Temperature  
23  
dv/dt  
E
127  
AS  
V
ISO  
--------  
2500  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(*) Current Limited by package’s thermal resistance  
(1) I 16A, di/dt 210A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
o
(2) Starting T = 25 C, I = 8A, V = 30V  
j
D
DD  
August 2002  
1/9  
.

STP16NF06LFP 替代型号

型号 品牌 替代类型 描述 数据表
STP6NK60ZFP STMICROELECTRONICS

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