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STP16NK60Z_05 PDF预览

STP16NK60Z_05

更新时间: 2024-11-23 04:01:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 235K
描述
N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH⑩ MOSFET

STP16NK60Z_05 数据手册

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STP16NK60Z - STB16NK60Z-S  
STW16NK60Z  
N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247  
Zener - Protecdet SuperMESH™ MOSFET  
TARGET SPECIFICATION  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP16NK60Z  
STB16NK60Z-S 600 V  
STW16NK60Z 600 V  
600 V  
< 0.42 Ω 14 A 190 W  
< 0.42 Ω 14 A 190 W  
< 0.42 Ω 14 A 190 W  
3
2
1
3
2
1
TYPICAL R (on) = 0.38 Ω  
DS  
2
I SPAK  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
TO-220  
3
2
1
DESCRIPTION  
TO-247  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt capability  
for the most demanding applications. Such series  
complements ST full range of high voltage MOS-  
FETs including revolutionary MDmesh™ products.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES  
Table 2: Order Codes  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STP16NK60Z  
P16NK60Z  
TO-220  
TUBE  
2
STB16NK60Z-S  
STW16NK60Z  
B16NK60Z  
W16NK60Z  
TUBE  
TUBE  
I SPAK  
TO-247  
Rev. 1  
September 2005  
1/10  
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.  

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