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STP16NE06LFP PDF预览

STP16NE06LFP

更新时间: 2024-11-02 03:06:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 72K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

STP16NE06LFP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.85
Is Samacsys:N雪崩能效等级(Eas):80 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):64 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP16NE06LFP 数据手册

 浏览型号STP16NE06LFP的Datasheet PDF文件第2页浏览型号STP16NE06LFP的Datasheet PDF文件第3页浏览型号STP16NE06LFP的Datasheet PDF文件第4页浏览型号STP16NE06LFP的Datasheet PDF文件第5页浏览型号STP16NE06LFP的Datasheet PDF文件第6页浏览型号STP16NE06LFP的Datasheet PDF文件第7页 
STP16NE06L  
STP16NE06L/FP  
N - CHANNEL ENHANCEMENT MODE  
SINGLE FEATURE SIZE POWER MOSFET  
TARGET DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP16NE06L  
STP16NE06LFP  
60 V  
60 V  
< 0.12 Ω  
< 0.12 Ω  
16 A  
11 A  
TYPICAL RDS(on) = 0.09 Ω  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
HIGH dV/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
DESCRIPTION  
TO-220  
TO-220FP  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ”Single Feature Size”  
process whereby a single body is implanted on a  
strip layout structure. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remark-  
able manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP16NE06L STP16NE06LFP  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
60  
V
V
± 15  
V
16  
10  
64  
60  
0.4  
11  
7
A
ID  
A
IDM()  
Ptot  
64  
A
Total Dissipation at Tc = 25 oC  
30  
W
W/oC  
Derating Factor  
0.2  
2000  
VISO  
dV/dt  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
6
V/ns  
oC  
oC  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 16 A,di/dt 200 A/µs, VDD V(BR)DSS, T TJMAX  
j
1/7  
October 1997  

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