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STP16NF06 PDF预览

STP16NF06

更新时间: 2024-09-22 22:20:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
9页 369K
描述
N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET⑩ II POWER MOSFET

STP16NF06 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:180306Samacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220Samacsys Released Date:2015-07-22 14:47:01
Is Samacsys:N雪崩能效等级(Eas):130 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W最大脉冲漏极电流 (IDM):64 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP16NF06 数据手册

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STP16NF06  
STP16NF06FP  
N-CHANNEL 60V - 0.08 - 16A TO-220/TO-220FP  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STP16NF06  
STP60NF06FP  
60 V  
60 V  
<0.1 Ω  
<0.1 Ω  
16 A  
11 A  
TYPICAL R (on) = 0.08Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
o
LOW GATE CHARGE AT 100 C  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
TO-220  
TO-220FP  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
INTERNAL SCHEMATIC DIAGRAM  
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
APPLICATIONS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
HIGH CURRENT, HIGH SWITCHING SPEED  
SOLENOID AND RELAY DRIVERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP16NF06  
STP16NF06FP  
V
Drain-source Voltage (V = 0)  
60  
60  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
± 20  
V
I
Drain Current (continuous) at T = 25°C  
16  
11  
11(*)  
7.5(*)  
44(*)  
25  
A
D
C
I
Drain Current (continuous) at T = 100°C  
A
D
C
I
()  
Drain Current (pulsed)  
64  
45  
0.3  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.17  
W/°C  
V/ns  
mJ  
V
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Insulation Withstand Voltage (DC)  
Storage Temperature  
20  
dv/dt  
E
130  
AS  
V
ISO  
--------  
2500  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(*) Current Limited by package’s thermal resistance  
(1) I 16A, di/dt 200A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
o
(2) Starting T = 25 C, I = 8A, V = 30V  
j
D
DD  
April 2002  
1/9  
.

STP16NF06 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06 STMICROELECTRONICS

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N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP5NK100Z STMICROELECTRONICS

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STP80NF10 STMICROELECTRONICS

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N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GAT

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