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STP16NE06L/FP PDF预览

STP16NE06L/FP

更新时间: 2024-11-25 22:06:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
7页 72K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET

STP16NE06L/FP 数据手册

 浏览型号STP16NE06L/FP的Datasheet PDF文件第2页浏览型号STP16NE06L/FP的Datasheet PDF文件第3页浏览型号STP16NE06L/FP的Datasheet PDF文件第4页浏览型号STP16NE06L/FP的Datasheet PDF文件第5页浏览型号STP16NE06L/FP的Datasheet PDF文件第6页浏览型号STP16NE06L/FP的Datasheet PDF文件第7页 
STP16NE06L  
STP16NE06L/FP  
N - CHANNEL ENHANCEMENT MODE  
SINGLE FEATURE SIZE POWER MOSFET  
TARGET DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STP16NE06L  
STP16NE06LFP  
60 V  
60 V  
< 0.12 Ω  
< 0.12 Ω  
16 A  
11 A  
TYPICAL RDS(on) = 0.09 Ω  
AVALANCHERUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
175oC OPERATING TEMPERATURE  
HIGH dV/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
3
2
2
1
1
DESCRIPTION  
TO-220  
TO-220FP  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ”Single Feature Size”  
process whereby a single body is implanted on a  
strip layout structure. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remark-  
able manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
STP16NE06L STP16NE06LFP  
Unit  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
60  
60  
V
V
± 15  
V
16  
10  
64  
60  
0.4  
11  
7
A
ID  
A
IDM()  
Ptot  
64  
A
Total Dissipation at Tc = 25 oC  
30  
W
W/oC  
Derating Factor  
0.2  
2000  
VISO  
dV/dt  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Peak Diode Recovery voltage slope  
Storage Temperature  
V
6
V/ns  
oC  
oC  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 16 A,di/dt 200 A/µs, VDD V(BR)DSS, T TJMAX  
j
1/7  
October 1997  

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