品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 双极性晶体管 | |
页数 | 文件大小 | 规格书 |
16页 | 437K | |
描述 | ||
Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STGB20M65DF2 | STMICROELECTRONICS |
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沟槽栅场截止IGBT,M系列,650 V、20 A,低损耗 | |
STGB20N40LZ | STMICROELECTRONICS |
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汽车级390 V内部钳制IGBT ESCIS 300 mJ | |
STGB20N45LZAG | STMICROELECTRONICS |
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汽车级450 V内部钳制IGBT ESCIS 300 mJ | |
STGB20NB32LZ | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL | |
STGB20NB32LZ-1 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALL | |
STGB20NB32LZT4 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT | |
STGB20NB37LZ | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT | |
STGB20NB37LZ_03 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT | |
STGB20NB37LZT4 | STMICROELECTRONICS |
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N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH TM IGBT | |
STGB20NB41LZ | STMICROELECTRONICS |
获取价格 |
N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT |